MOSFET công suất kênh N đôi 60V, 29A Taiwan Semiconductor TSM250NB06LDCR RLG

Fall Time: 18 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: Dual N-Channel Power MOSFET

Qg - Gate Charge: 23 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 33 S

Rds On - Drain-Source Resistance: 25 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V