MOSFET công suất kênh N đơn 900V 2.5A Taiwan Semiconductor TSM3N90CZ C0G

Fall Time: 31 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: N-Channel Power MOSFET

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 94 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 4.3 Ohms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 2 V