MOSFET 600V, 4A, MOSFET Công Suất Kênh N Đơn Taiwan Semiconductor TSM60NC980CP ROG

Fall Time: 17 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 326.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N Channel

Qg - Gate Charge: 11 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 57 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 28 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 980 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 5 V