MOSFETs 12V Kênh N FemtoF ET MOSFET A 595-CSD13383F4 Texas Instruments CSD13383F4T

Width: 0.64 mm

Height: 0.35 mm

Length: 1 mm

Fall Time: 315 ns

Rise Time: 123 ns

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 2.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 39 ns

Typical Turn-Off Delay Time: 96 ns

Id - Continuous Drain Current: 2.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.4 S

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V