MOSFET kênh P -20 V Nex FET công suất A 595-CSD25501F3T Texas Instruments CSD25501F3

Fall Time: 945 ns

Rise Time: 428 ns

Technology: Si

Unit Weight: 0.300 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.02 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 474 ns

Typical Turn-Off Delay Time: 1154 ns

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.4 S

Rds On - Drain-Source Resistance: 260 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.05 V