MOSFET kép N-CH công suất 20V Texas Instruments CSD85312Q3E

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 6 ns

Rise Time: 27 ns

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 11.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 99 S

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V