MOSFET kênh N đồng bộ hạ áp 25-V NexFET A 595-CSD86336Q3DT Texas Instruments CSD86336Q3D

Fall Time: 2 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 99.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Power MOSFET

Qg - Gate Charge: 3.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 9.1 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V