Silicon Epitaxial Planar Type US6-M8 Toshiba HN1D02FU,LF

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Unit Weight: 6.800 mg

Configuration: Quad

Qualification: AEC-Q101

Recovery Time: 1.6 ns

Mounting Style: SMD/SMT

Max Surge Current: 2 A

If - Forward Current: 300 mA

Ir - Reverse Current: 500 nA

Peak Reverse Voltage: 85 V

Vf - Forward Voltage: 600 mV

Vr - Reverse Voltage: 80 V

Pd - Power Dissipation: 200 mW

Maximum Diode Capacitance: 3 pF

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C