MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V Vishay General Semiconductor SI2323DS-T1-GE3

Width: 1.6 mm

Height: 1.45 mm

Length: 2.9 mm

Fall Time: 48 ns

Rise Time: 43 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 12.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 71 ns

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 39 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V