MOSFETs 40V Vds 20V Vgs SO-8 Vishay General Semiconductor SI4840BDY-T1-GE3

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 19 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V