MOSFETs 30V Vds 20V Vgs 1206-8 ChipFET Vishay General Semiconductor SI5902BDC-T1-E3

Width: 1.65 mm

Height: 1.1 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 85 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.12 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V