MOSFET -150V Vds 20V Vgs PowerPAK 1212-8 Vishay General Semiconductor SI7115DN-T1-E3

Width: 3.3 mm

Height: 1.04 mm

Length: 3.3 mm

Fall Time: 35 ns

Rise Time: 95 ns

Technology: Si

Unit Weight: 1 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 27.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 52 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 52 ns

Id - Continuous Drain Current: 8.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 295 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4 V