MOSFETs HVMDIP 60V 1.1A MOSFET P-KÊNH Vishay Siliconix IRFD9014PBF

Width: 5 mm

Height: 3.37 mm

Length: 6.29 mm

Technology: Si

Unit Weight: 894.062 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 1.1 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 4 V