BJTs - Transistor Lưỡng Cực Trans GP BJT NPN 400V 10A 3Chân(3+Tab) WeEn Semiconductors BUJ106A,127

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 33

Collector- Base Voltage VCBO: 700 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 400 mV