Transistor IGBT WG50N65LDJ1/SOT1293/ĐÁNH DẤU TIÊU CHUẨN * NGANG, ĐÓNG GÓI THANH RAY WeEn Semiconductors WG50N65LDJ1Q

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 78 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.25 V

Continuous Collector Current at 25 C: 43 A