MOSFETs 1.2kV 32mOHMS G3 MOSFET SiC Wolfspeed C3M0032120D

Fall Time: 19 ns

Rise Time: 22 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 114 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 283 W

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Typical Turn-On Delay Time: 107 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 63 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 27 S

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V