SiC MOSFETS 1.2kV 75mOHMS E3M TỰ ĐỘNG AECQ101 Wolfspeed E3M0075120D

Fall Time: 16 ns

Rise Time: 18 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 57 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 145 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 52 ns

Typical Turn-Off Delay Time: 31 ns

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V