Central Semiconductor 2N3053 TIN/LEAD 双极型晶体管 BJTs 60Vcbo 40Vceo 5.0V 0.7A 5.0W NPN

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 250 at 150 mA, 10 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 700 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 at 150 mA, 2.5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.4 V