Central Semiconductor 2N5786 PBFREE 双极晶体管 BJTs 45Vcbo 40Vceo 3.5Vebo 2.0V

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 150 at 1.6 A, 2 V

Gain Bandwidth Product fT: 1 MHz

Emitter- Base Voltage VEBO: 3.5 V

Collector- Base Voltage VCBO: 45 V

DC Collector/Base Gain hfe Min: 20 at 1.6 A, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V