Central Semiconductor 2N657A TIN/LEAD 双极晶体管 BJTs 100Vcbo 100Vceo 6.0Vebo 10uA 20pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

DC Current Gain hFE Max: 90

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 2 V