Central Semiconductor BC309B PBFREE 双极晶体管穿孔晶体管-小信号(<=1A)PNP低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 460 at 5 V, 2 mA

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 180 at 5 V, 2 mA

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 300 mV