Central Semiconductor BFY90 TIN/LEAD 射频双极型晶体管 NPN 射频 30Vcbo 30Vcer 15Vceo 25mA

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Bipolar

Operating Frequency: 1.1 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 25 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 at 2 mA, 1 V

Collector- Emitter Voltage VCEO Max: 15 V