Central Semiconductor CEDM7002AE TR PBFREE MOSFETs 60V N沟道 ESD FET 60Vdg 20Vgs 100mW

Technology: Si

Unit Weight: 51.863 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 500 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V