Central Semiconductor PN3646 PBFREE 双极晶体管 BJTs - 双极晶体管 SS 晶体管

Unit Weight: 217 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 15 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV