Central Semiconductor PN4889 TIN/LEAD 双极晶体管穿孔晶体管-小信号(<=1A)PNP高压

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300 at 10 V, 10 mA

Gain Bandwidth Product fT: 400 kHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 10 V, 1 mA

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 500 mV