Comchip Technology ACMSN2312T-HF MOSFETs 汽车用N沟道MOSFET 20V 4.9A 0.75W SOT-23

Fall Time: 31 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 11.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 4.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 31 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V, 8 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V