Comchip Technology MMBTA42-HF 双极型晶体管 NPN 300V 350mW SOT-23

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 200 at 10 mA, 10 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 300 mA

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 200 mV