Diodes Incorporated DMC25D0UVT-7 MOSFET 20V 增强型场效应管

Fall Time: 3.7 ns, 14.6 ns

Rise Time: 2.3 ns, 3.3 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 700 pC, 21 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V

Typical Turn-On Delay Time: 3 ns, 3.5 ns

Typical Turn-Off Delay Time: 7.7 ns, 61.4 ns

Id - Continuous Drain Current: 400 mA, 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms, 300 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V, 30 V

Vgs th - Gate-Source Threshold Voltage: 650 mV, 500 mV