Diodes Incorporated DMC25D1UVT-7 MOSFET 20V 增强型场效应管

Fall Time: 4.3 ns, 6.5 ns

Rise Time: 1.4 ns, 2.7 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 900 pC, 24.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.3 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 2.5 ns, 1.2 ns

Typical Turn-Off Delay Time: 5.7 ns, 9.8 ns

Id - Continuous Drain Current: 500 mA, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4 Ohms, 100 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V, 12 V

Vgs th - Gate-Source Threshold Voltage: 650 mV, 350 mV