DT Detection Technology X-SCAN ME3080410A 多能量X射线线阵相机 (410 mm)

Detection method : Direct conversion, photon counting

Semiconductor type : CdTe

Crystal thickness : 2 mm

Detector element pitch:  0.8 mm

Detector element binning : 1x1 (0.8 mm pitch); 2x1 (1.6 mm pitch)

Active area length : 410 mm (512 pixels)

Energy range : 20 – 160 keV

Linearity : ≥ 83% @ 4•106  counts/s/pix

Count rate saturation : > 7.0•106  counts/s/pix

Energy resolution (FWHM) : 7.7 KeV @ 60 keV (105  counts/pix/s)

Line speed : 4 m/min to 96 m/min

Counting period : 0.5 ms to 100 ms (with step of 10 µs)

Energy bins (channels) : Up to 128 in HER mode / 2 - 8 independently configurable in BIN mode

Pixel dynamic range / energy bin : 16 bits per bin in HER mode / 32 bits per bin in BIN mode

Power supply Voltage : 48 V DC

Power consumption :  140 W

Cooling medium flow & pressure : 5 l/min @10 PSI

Interface, detector module to control unit : ME-link protocol with Cat7 cable, IP67 M12X connectors

Interface location (power, data, cooling) : Long side, center

Interface, control unit to host computer : Gigabit Ethernet, Cat7 cable, M12X-RJ45 connectors

Enclosure dimensions : 512 x 284 x 54 mm

Weight : 15 kg

EMC compliance : EN 61326-1, EN 61000-4-2, EN 61000-4-3

RoHS compliance : Yes

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