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Detection method : Direct conversion, photon counting
Semiconductor type : CdTe
Crystal thickness : 2 mm
Detector element pitch: 0.8 mm
Detector element binning : 1x1 (0.8 mm pitch); 2x1 (1.6 mm pitch)
Active area length : 410 mm (512 pixels)
Energy range : 20 – 160 keV
Linearity : ≥ 83% @ 4•106 counts/s/pix
Count rate saturation : > 7.0•106 counts/s/pix
Energy resolution (FWHM) : 7.7 KeV @ 60 keV (105 counts/pix/s)
Line speed : 4 m/min to 96 m/min
Counting period : 0.5 ms to 100 ms (with step of 10 µs)
Energy bins (channels) : Up to 128 in HER mode / 2 - 8 independently configurable in BIN mode
Pixel dynamic range / energy bin : 16 bits per bin in HER mode / 32 bits per bin in BIN mode
Power supply Voltage : 48 V DC
Power consumption : 140 W
Cooling medium flow & pressure : 5 l/min @10 PSI
Interface, detector module to control unit : ME-link protocol with Cat7 cable, IP67 M12X connectors
Interface location (power, data, cooling) : Long side, center
Interface, control unit to host computer : Gigabit Ethernet, Cat7 cable, M12X-RJ45 connectors
Enclosure dimensions : 512 x 284 x 54 mm
Weight : 15 kg
EMC compliance : EN 61326-1, EN 61000-4-2, EN 61000-4-3
RoHS compliance : Yes
