Fairchild J112-D27Z JFET N沟道开关

Technology: Si

Unit Weight: 201 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 mW

Gate-Source Cutoff Voltage: - 5 V

Drain-Source Current at Vgs=0: 5 mA

Rds On - Drain-Source Resistance: 50 Ohms

Vgs - Gate-Source Breakdown Voltage: - 35 V