Infineon FP150R12N3T7B80BPSA1 IGBT 硅模块 1200 V, 150 A PIM IGBT 模块

Technology: Si

Configuration: PIM 3-Phase Input Rectifier

Mounting Style: Through Hole

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 150 A