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Fall Time: 16.4 ns
Rise Time: 6.3 ns
Technology: Si
Unit Weight: 24 g
Configuration: Hex
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vf - Forward Voltage: 4.6 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 20 mW
Vgs - Gate-Source Voltage: - 10 V, + 20 V
Typical Turn-On Delay Time: 8.2 ns
Typical Turn-Off Delay Time: 35.2 ns
Id - Continuous Drain Current: 25 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.45 V
