Infineon IKZA75N65SS5XKSA1 IGBT晶体管 650 V，75 A IGBT分立器件，带碳化硅肖特基二极管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 395 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 80 A