InterFET IFN112 JFET JFET N沟道 -50V 低噪声

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 1.2 V

Drain-Source Current at Vgs=0: 9 mA

Forward Transconductance - Min: 7 mS

Vgs - Gate-Source Breakdown Voltage: - 50 V