InterFET IFN5566 JFET JFET N沟道（双通道）-40V 低噪声

Technology: Si

Unit Weight: 2.163 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 650 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 30 mA

Forward Transconductance - Min: 7000 uhmo

Rds On - Drain-Source Resistance: 100 Ohms

Vgs - Gate-Source Breakdown Voltage: - 40 V