InterFET IFNU422 JFET JFET N沟道（双通道）-40V 低Ciss

Technology: Si

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 750 mW

Gate-Source Cutoff Voltage: - 2 V

Drain-Source Current at Vgs=0: 1 mA

Forward Transconductance - Min: 100 mS

Vgs - Gate-Source Breakdown Voltage: - 60 V