IXYS IXFL44N100P MOSFETs 44安培 1000伏 0.22 Rds

Width: 5.21 mm

Height: 26.42 mm

Length: 20.29 mm

Fall Time: 54 ns

Rise Time: 68 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 357 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV