IXYS IXTH96P085T MOSFETs -96安培 -85伏 0.013导通电阻

Fall Time: 22 ns

Rise Time: 34 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 180 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 298 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 96 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 13 mOhms

Vds - Drain-Source Breakdown Voltage: 85 V

Vgs th - Gate-Source Threshold Voltage: 2 V