IXYS IXTP180N055T MOSFETs 180安培 55伏 0.004欧姆 Rds

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 180 A

Rds On - Drain-Source Resistance: 4 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V