IXYS IXTP270N04T4 MOSFETs 40V/270A TrenchT4 功率MOSFET

Fall Time: 23 ns

Rise Time: 28 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 182 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 72 ns

Id - Continuous Drain Current: 270 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 2.4 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V