IXYS IXTQ280N055T MOSFETs 280安培 55伏 2.8 Rds

Width: 4.9 mm

Height: 20.3 mm

Length: 15.8 mm

Fall Time: 37 ns

Rise Time: 55 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 W

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 49 ns

Id - Continuous Drain Current: 280 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.2 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V