IXYS IXTQ64N25P MOSFETs 64安培 250伏 0.049 Rds

Width: 4.9 mm

Height: 20.3 mm

Length: 15.8 mm

Fall Time: 20 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 5.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 105 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 64 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 30 S

Rds On - Drain-Source Resistance: 49 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V