IXYS IXYH16N170C IGBT晶体管 TO247 1700V 16A IGBT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 310 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 3.8 V

Continuous Collector Current at 25 C: 40 A