IXYS IXYH55N120B4H1 IGBT晶体管 IXYH55N120B4H1

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 650 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 138 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 138 A