IXYS IXYN100N65C3H1 IGBT晶体管 650V/166A XPT 共封装 SOT-227B

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 166 A

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 160 A