MACOM CG2H40010F 氮化镓场效应晶体管 GaN HEMT DC-8.0GHz，10瓦

Gain: 16.5 dB

Technology: GaN

Unit Weight: 4.200 g

Output Power: 10 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 6 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 2.7 V