MACOM CG2H40045F 氮化镓场效应晶体管 GaN HEMT DC-4.0GHz，45瓦

Gain: 16 dB

Technology: GaN

Unit Weight: 9.105 g

Output Power: 45 W

Mounting Style: Screw Mount

Development Kit: CG2H40045F-TB

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 4 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V

Vds - Drain-Source Breakdown Voltage: 120 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V