MACOM CGHV50200F 氮化镓场效应晶体管 GaN HEMT 4.4-5.0GHz，200瓦

Gain: 11.5 dB

Technology: GaN

Output Power: 180 W

Mounting Style: Screw Mount

Development Kit: CGHV50200F-AMP

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 5 GHz

Minimum Operating Frequency: 4.4 GHz

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.4 V