Micro Commercial Components (MCC) BC856AHE3-TP 双极型晶体管 PNP 信号晶体管，SOT-23

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 310 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 125

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 250 mV